Transport and percolation in a low-density high-mobility two-dimensional hole system

Abstract

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm${}^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of $T$= 50 mK, the conductivity vs. density data indicates an inhomogeneity driven percolation-type transition to an insulating state at a critical density of $3.8\times 10^9$ cm${}^{-2}$.

accepted for publication in PRL

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• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
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• Ground-state properties of the disordered Hubbard model in two dimensions
• Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases
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• Valley dependent many-body effects in 2D semiconductors
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• Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers
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• Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
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• Temperature-dependent Drude transport in a two-dimensional electron gas
• Coexistence of two hole phases in high-quality $p$-GaAs/AlGaAs in the vicinity of Landau level filling factors $\nu$=1 and $\nu$=(1/3)
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