Transport and percolation in a low-density high-mobility two-dimensional hole system

Abstract

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$ cm${}^{-2}$), the nonmonotonic temperature dependence ($\sim 50-300$ mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of $T$= 50 mK, the conductivity vs. density data indicates an inhomogeneity driven percolation-type transition to an insulating state at a critical density of $3.8\times 10^9$ cm${}^{-2}$.

accepted for publication in PRL

References in corpus (3)

• Metal-insulator transition in two-dimensional electron systems
• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
• Density and well width dependences of the effective mass of twodimensional holes in (100) GaAs quantum wells measured by cyclotron resonance at microwave frequencies

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• Transport and drag in undoped electron-hole bilayers
• Layer interdependence of transport in an undoped electron-hole bilayer
• Local moments and magnetic order in the two-dimensional Anderson-Mott transition
• Temperature-dependent Drude transport in a two-dimensional electron gas