Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
arXiv:cond-mat/0501532 · doi:10.1103/PhysRevB.72.081313
Abstract
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility μ=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in the Si 2D systems. In-plane magnetoresistance study was carried out in the higher density range where the 2DES shows the metallic-like behavior. It is observed that the in-plane magnetoresistance first increases as ~ B_{ip}^2 and then saturates to a finite value ρ(B_c) for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonically with n but appears to saturate to a finite value as n approaches zero. Furthermore, ρ(B_c)/ρ(0) ~ 1.8 for all the densities ranging from 0.35 x 10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c, collapses onto a single curve.
References in corpus (21)
- Metal-insulator transition in two-dimensional electron systems
- Magnetic Field Suppression of the Conducting Phase in Two Dimensions
- Spin Degree of Freedom in a Two-Dimensional Electron Liquid
- Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
- Spin Susceptibility of an Ultra-Low Density Two Dimensional Electron System
- Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field
- Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs
- In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
- Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's: the Effect of Strong In-Plane Magnetic Field
- Interaction-induced magnetoresistance in a two-dimensional electron gas
- The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
- Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point
- Metallicity and its low temperature behavior in dilute 2D carrier systems
- Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers
- Spin polarization and metallic behavior of a silicon two-dimensional electron system
- The effect of a parallel magnetic field on the Boltzmann conductivity and the Hall coefficient of a disordered two dimensional Fermi liquid
- Optical properties of structurally-relaxed Si/SiO superlattices: the role of bonding at interfaces
- Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential
- Spin and Valley dependent analysis of the two-dimensional low-density electron system in Si-MOSFETS
- Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
- Two dimensional electron gas near full polarization
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- Transport in strongly correlated two dimensional electron fluids
- The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
- Transport and percolation in a low-density high-mobility two-dimensional hole system
- Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
- Spin-valley phase diagram of the two-dimensional metal-insulator transition
- Valley polarization assisted spin polarization in two dimensions
- Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
- Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
- The energy scale behind the metallic behaviors in low-density Si-MOSFETs
- Fractional Quantum Hall Effect in a Diluted Magnetic Semiconductor
- Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
- Conductance quantization in etched Si/SiGe quantum point contacts
- Large Magnetoresistance of a Dilute -Si/SiGe/Si Quantum Well in a Parallel Magnetic Field
- Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
- Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells
- Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid
- A metal-insulator transition in 2D: Established facts and open questions
- Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
- Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
- Evidence for mixed phases and percolation at the metal-insulator transition in two dimensions
- Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
- Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
- Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well
- Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
- In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
- Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field
- Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results
- Universal transport at Lifshitz metal-insulator transitions in two dimensions