Metal-insulator transition in a 2D electron gas: Equivalence of two approaches for determining the critical point

Abstract

The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.

arXiv commentAs published

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• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
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• Metal-insulator transition and low-density phases in a strongly-interacting two-dimensional electron system
• Low-Temperature 2D/2D Ohmic Contacts in WSe${}_2$ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition
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