Conductivity of Silicon Inversion Layers: comparison with and without in-plane magnetic field

Abstract

A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a magnetic field. We show explicitly and quantitatively that a magnetic field applied parallel to the plane of the electrons reduces the slope of the conductivity versus temperature curves to near zero over a broad range of electron densities extending from $n_c$ to deep in the metallic regime where the high field conductivity is on the order of $10e^2/h$. The strong suppression (or "quenching") of the metallic behavior by a magnetic field sets an important constraint on theory.

4 pages, 4 figures

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Cited by in corpus (10)

• Transport in strongly correlated two dimensional electron fluids
• Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
• Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
• Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
• Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime
• Metallic behavior in Si/SiGe 2D electron systems
• Inducing a metal-insulator transition in disordered interacting Dirac fermion systems via an external magnetic field
• Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection
• Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field
• Charge Transport in a Spin-Polarized 2D Electron System in Silicon