Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

Abstract

We compare the temperature dependence of resistivity ρ(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of ρwith temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance ρ(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than ρ(T).

4 pages, 5 figures. References updated

References in corpus (8)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• Dilute electron gas near the metal-insulator transition in two dimensions
• The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
• In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

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• Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
• Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
• Novel Energy Scale in the Interacting 2D Electron System Evidenced from Transport and Thermodynamic Measurements
• Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition
• Spin-valley interplay in two-dimensional disordered electron liquid
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• Scale-dependent theory of the disordered electron liquid
• Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate
• Comment on "Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures"
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• On the temperature dependence of 2D "metallic" conductivity in Si inversion layers at intermediate temperatures
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• Observation of geometry dependent conductivity in two-dimensional electron systems
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• Thermal correction to resistivity in dilute 2D systems
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• Interactions in high-mobility 2D electron and hole systems