Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array
arXiv:1512.07572 · doi:10.1103/PhysRevB.93.205407
Abstract
By measuring magnetoresistance and Hall effect in classically moderate perpendicular magnetic field in Si-MOSFET-type macroscopic antidot array we found a novel effect: nonlinear with field, temperature- and density-dependent Hall resistivity. We discuss qualitative explanation of the phenomenon and suggest that it might originate from strong temperature dependence of the resistivity and mobility in the shells of the antidots.
arXiv comment4 pages, 7 figures
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