Low magnetic field anomaly of the Hall effect in disordered 2D systems: Interplay between weak localization and electron-electron interaction

Abstract

The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In${}_x$Ga${}_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the weaker temperature dependence of the conductivity as compared with that predicted by the first-order theory of the quantum corrections to the conductivity. We show that both effects in strongly disordered systems stem from the second order quantum correction caused by the effect of weak localization on the interaction correction and vice versa. This correction contributes mainly to the diagonal component of the conductivity tensor, it depends on the magnetic field like the weak localization correction and on the temperature like the interaction contribution.

7 pages, 7 figures

References in corpus (5)

• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
• Renormalization of hole-hole interaction at decreasing Drude conductivity
• Disorder and temperature renormalization of interaction contribution to the conductivity in two-dimensional In${}_x$Ga${}_{1-x}$As electron systems
• Sharp Magnetic Field Dependence of the 2D Hall Coefficient Induced by Classical Memory Effects

Cited by in corpus (4)

• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Simple mechanism that breaks the Hall effect linearity at low temperatures
• Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields
• Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array