Interaction-induced magnetoresistance: From the diffusive to the ballistic regime

Abstract

We study interaction-induced quantum correction to the conductivity tensor of electrons in two dimensions for arbitrary T tau, where T is the temperature and tau the transport mean free time. A general formula is derived, expressing the correction in terms of classical propagators ("ballistic diffusons"). The formalism is used to calculate the interaction contribution to the magnetoresistance in a classically strong transverse field and smooth disorder in the whole range of temperatures from the diffusive (T tau<<1) to the ballistic (T tau>1) regime.

4 pages, 3 figures, accepted for publication in PRL

References in corpus (8)

• Quantum Transport in Semiconductor Nanostructures
• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• Interaction corrections at intermediate temperatures: magneto-resistance in parallel field
• Interaction corrections at intermediate temperatures: dephasing time
• Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime
• Quasiclassical magnetotransport in a random array of antidots
• Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime

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