Interaction correction to conductivity of Al${}_x$Ga${}_{1-x}$As/GaAs double quantum well heterostructures near the balance

Abstract

The electron-electron interaction quantum correction to the conductivity of the gated double well Al${}_x$Ga${}_{1-x}$As/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior; it is practically the same for both regimes.

5 pages, 4 figures

References in corpus (5)

• Resonance oscillations of magnetoresistance in double quantum wells
• Nonlinear transport and oscillating magnetoresistance in double quantum wells
• Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
• Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate
• Dephasing and interwell transitions in double quantum well heterostructures

Cited by in corpus (4)

• Interaction and disorder effects in 3D topological insulator thin films
• Scale-dependent theory of the disordered electron liquid
• Disordered electron liquid in double quantum well heterostructures: Renormalization group analysis and dephasing rate
• Quantum corrections to conductivity of disordered electrons due to inelastic scattering off magnetic impurities