Weak-localization corrections to the conductivity of double quantum wells

Abstract

The weak-localization contribution δσ(B) to the conductivity of a tunnel-coupled double-layer electron system is evaluated and its behavior in weak magnetic fields B perpendicular or parallel to the layers is examined. In a perpendicular field B, δσ(B) increases and remains dependent on tunneling as long as the magnetic field is smaller than \hbar/e D τ_t, where D is the in-plane diffusion coefficient and τ_t the interlayer tunneling time. If τ_t is smaller than the inelastic scattering time, a parallel magnetic field also leads to a considerable increase of the concuctivity starting with a B**2 law and saturating at fields higher than \hbar/e Z (D τ_t)**(1/2), where Z is the interlayer distance. In the limit of coherent tunneling, when τ_t is comparable to elastic scattering time, δσ(B) differs from that of a single-layer system due to ensuing modifications of the diffusion coefficient. A possibility to probe the weak-localization effect in double-layer systems by the dependence of the conductivity on the gate-controlled level splitting is discussed.

Text 18 pages in Latex/Revtex format, 4 Postscript figures. J. Phys.: CM,in press

References in corpus (2)

• Negative hopping magnetoresistance of two-dimensional electron gas in a smooth random potential
• Dimensional Crossover of Weak Localization in a Magnetic Field

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