Electron-electron interaction at decreasing $k_{F}l$

Abstract

The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_{F}l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_{F}l$ decrease.

5 pages, 6 figures

References in corpus (9)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Quasiclassical negative magnetoresistance of a 2D electron gas: interplay of strong scatterers and smooth disorder
• Interaction-induced magnetoresistance: From the diffusive to the ballistic regime
• Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime
• Interaction corrections to the Hall coefficient at intermediate temperatures
• Classical mechanism for negative magnetoresistance in two dimensions
• Does theory of quantum correction to conductivity agree with experimental data in 2D systems?
• Quantum corrections to conductivity: from weak to strong localization
• Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures

Cited by in corpus (20)

• Interaction-induced magnetoresistance in a two-dimensional electron gas
• Manifestation of electron-electron interaction in the magnetoresistance of graphene
• Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
• Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime
• Giant suppression of the Drude conductivity due to quantum interference in disordered two-dimensional systems
• Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime
• Weak antilocalization in HgTe quantum well with inverted energy spectrum
• Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas
• Magnetoresistance of disordered graphene: from low to high temperatures
• Renormalization of hole-hole interaction at decreasing Drude conductivity
• Electron-Electron Interactions in 2D Semiconductor InSe
• Disorder and temperature renormalization of interaction contribution to the conductivity in two-dimensional In${}_x$Ga${}_{1-x}$As electron systems
• Nonohmic conductivity as a probe of crossover from diffusion to hopping in two dimensions
• Interaction correction to conductivity of Al${}_x$Ga${}_{1-x}$As/GaAs double quantum well heterostructures near the balance
• Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields
• Interaction correction to the conductivity of two-dimensional electron gas in In${}_x$Ga${}_{1-x}$As/InP quantum well structure with strong spin-orbit coupling
• Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder
• Analysis of homogeneity of 2D electron gas at decreasing of electron density