Interaction correction to the conductivity of two-dimensional electron gas in In${}_x$Ga${}_{1-x}$As/InP quantum well structure with strong spin-orbit coupling

Abstract

The electron-electron interaction quantum correction to the conductivity of the gated single quantum well InP/In${}_{0.53}$Ga${}_{0.47}$As heterostructures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for different values of spin relaxation rate, $1/{\tau }_s$. The surprising result is that the spin relaxation processes do not suppress the interaction correction in the triplet channel and, thus, do not enhance the correction in magnitude contrary to theoretical expectations even in the case of relatively fast spin relaxation, $1/T{\tau }_s\simeq (20-25)\gg 1$.

7 pages, 6 figures

References in corpus (2)

• Weak antilocalization in high mobility Ga(x)In(1-x)As/InP two-dimensional electron gases with strong spin-orbit coupling
• Renormalization of hole-hole interaction at decreasing Drude conductivity

Cited by in corpus (3)

• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Quantum corrections to conductivity of disordered electrons due to inelastic scattering off magnetic impurities
• Weak localization at arbitrary disorder strength in systems with generic spin-dependent fields