Hole-hole interaction in a strained In${}_x$Ga${}_{1-x}$As two dimensional system

Abstract

The interaction correction to the conductivity of 2D hole gas in strained GaAs/In${}_x$Ga${}_{1-x}$As/GaAs quantum well structures was studied. It is shown that the Zeeman splitting, spin relaxation and ballistic contribution should be taking into account for reliable determination of the Fermi-liquid constant $F_0^{\sigma }$. The proper consideration of these effects allows us to describe both th temperature and magnetic field dependences of the conductivity and find the value of $F_0^{\sigma }$.

7 pages, 6 figures

References in corpus (9)

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Cited by in corpus (6)

• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Weak antilocalization in HgTe quantum well with inverted energy spectrum
• Renormalization of hole-hole interaction at decreasing Drude conductivity
• Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/In${}_x$Ga${}_{1-x}$As/GaAs quantum well
• Interaction correction to the conductivity of two-dimensional electron gas in In${}_x$Ga${}_{1-x}$As/InP quantum well structure with strong spin-orbit coupling
• Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime