Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit

Abstract

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_s$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_0^{\sigma }$ determined from the experiment, however, decreases with increasing $r_s$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_s$.

6 pages, 4 figures

References in corpus (6)

• Interaction corrections at intermediate temperatures: I. Longitudinal conductivity and kinetic equation
• Sharp increase of the effective mass near the critical density in a metallic 2D electron system
• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
• Spin polarization and g-factor of a dilute GaAs two-dimensional electron system
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• In-plane Magnetoconductivity of Si-MOSFET's: A Quantitative Comparison between Theory and Experiment

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• Interaction-induced magnetoresistance in a two-dimensional electron gas
• The so-called two dimensional metal-insulator transition
• Metallicity and its low temperature behavior in dilute 2D carrier systems
• Electronic hydrodynamics and the breakdown of the Wiedemann-Franz and Mott laws in interacting metals
• Quasiparticle self-energy and many-body effective mass enhancement in a two-dimensional electron liquid
• Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition
• Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures
• Undoped Electron-Hole Bilayers in a GaAs/AlGaAs Double Quantum Well
• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Evidence of a two-stage melting of Wigner solids in two dimensions
• Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases
• A low density finite temperature apparent "insulating" phase in 2D systems
• Spin Density Matrix of Spin-3/2 Hole Systems
• Anatomy of the quantum melting of the two dimensional Wigner crystal
• Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs
• Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
• Spin Polarization of Quasi Two-Dimensional Hole Systems
• Coulomb Drag near the metal-insulator transition in two-dimensions
• Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
• Non-activated transport of strongly interacting two-dimensional holes in GaAs
• Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
• Strange metallicity of moiré twisted bilayer graphene
• Interplay between phonon and impurity scattering in 2D hole transport
• The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems
• Effects of Electron-Electron and Electron-Phonon Interactions in Weakly Disordered Conductors and Heterostuctures
• In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory
• Hole-hole interaction in a strained In${}_x$Ga${}_{1-x}$As two dimensional system
• Planckian properties of 2D semiconductor systems
• The role of electron-electron collisions for charge and heat transport at intermediate temperatures
• Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems
• Metallic behavior in Si/SiGe 2D electron systems
• Semiclassical theory of the interaction correction to the conductance of antidot arrays
• 1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase
• Temperature dependent weak field Hall resistance in 2D carrier systems
• Spontaneous spin polarization in doped semiconductor quantum wells
• Thermal correction to resistivity in dilute 2D systems
• Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime
• Anomalous Corrections to Hall Resistivity of Spin-Polarized Two-Dimensional Holes in a GaAs/AlGaAs Heterostructure
• Interactions in high-mobility 2D electron and hole systems