Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure

Abstract

We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.

4 pages, 4 figures, submitted for publication

References in corpus (6)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
• Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots
• Conditional operation of a spin qubit
• Mesoscopic structures and 2D hole systems in fully field effect controlled heterostructures
• Hole transport in p-type GaAs quantum dots and point contacts

Cited by in corpus (10)

• Semiconductor Spin Qubits
• Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
• Recent advances in hole-spin qubits
• Landau-Zener-Stuckelberg-Majorana interferometry of a single hole
• First-principles hyperfine tensors for electrons and holes in GaAs and silicon
• Fabrication and characterization of an undoped GaAs/AlGaAs quantum dot device
• Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
• Spin-orbit enabled quantum transport channels in a two-hole double quantum dot
• Maximizing the purity of a qubit evolving in an anisotropic environment
• G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors