Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

Abstract

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than $e^2/h$. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

arXiv comment3 pages, 2 figures

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• Phase separation in the two-dimensional electron liquid in MOSFETs
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Cited by in corpus (11)

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• Anatomy of the quantum melting of the two dimensional Wigner crystal
• Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructure
• Disappearance of the metal-like behavior in GaAs two-dimensional holes below 30 mK
• Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
• Non-activated transport of strongly interacting two-dimensional holes in GaAs
• Local transport in a disorder-stabilized correlated insulating phase
• 1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase
• Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well
• Temperature-dependent Drude transport in a two-dimensional electron gas