Non-activated transport of strongly interacting two-dimensional holes in GaAs

Abstract

We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a non-activated conductivity that grows with temperature following a power law. We contrast it with the activated transport obtained from measuring more disordered samples, and discuss possible transport mechanisms in this strongly-interacting regime.

arXiv comment5 pages, 4 figures

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• Metallic behavior and related phenomena in two dimensions
• Possible Metal/Insulator Transition at B=0 in Two Dimensions
• Resistivity of dilute 2D electrons in an undoped GaAs heterostructure
• Phase separation in the two-dimensional electron liquid in MOSFETs
• Interaction corrections at intermediate temperatures: dephasing time
• Interaction Corrections to Two-Dimensional Hole Transport in Large $r_s$ Limit
• Experimental Evidence for a Coulomb Gap in Two Dimensions
• A low density finite temperature apparent "insulating" phase in 2D systems
• Linear temperature dependence of conductivity in the "insulating" regime of dilute two-dimensional holes in GaAs

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• Disappearance of the metal-like behavior in GaAs two-dimensional holes below 30 mK
• Nearly frozen Coulomb Liquids
• Temperature-dependent Drude transport in a two-dimensional electron gas
• Surprising coincidence of the apparent 2D metal-to-insulator transition data with Fermi-gas based model results
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