Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

Abstract

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0-5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.

5 pages, 2 figures, will appear in PRL (12 July, 1999)

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