Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems

Abstract

Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $\rho$. The relaxation time ${\tau }_{\mathrm{CR}}$ shows a negative temperature dependence, which is similar to that of the transport scattering time ${\tau }_t$ obtained from $\rho$. The ratio ${\tau }_{\mathrm{CR}}/{\tau }_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.

4 pages, 3 figures

References in corpus (2)

• Transport in strongly correlated two dimensional electron fluids
• Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well

Cited by in corpus (1)

• In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system