140 citations · 266 across the 11 of their papers we have counts for
11 papers
Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Rai Moriya, Kentarou Sawano, Yusuke Hoshi +8
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed we…
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
T. Obata, K. Takeda, J. Kamioka +6
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si chan…
In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano +2
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization.…
Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Ryuichi Masutomi, Kohei Sasaki, Ippei Yasuda +4
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature depende…
Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots
Satoru Miyamoto, Oussama Moutanabbir, Toyofumi Ishikawa +5
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are si…
Well-width dependence of valley splitting in Si/SiGe quantum wells
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama +3
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, ob…