Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
arXiv:cond-mat/0603432 · doi:10.1103/PhysRevB.73.121304
Abstract
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.
5 pages, 5 figures, to appear in Phys. Rev. B (Rapid Communications)