140 citations · 885 across the 23 of their papers we have counts for
23 papers
Low-frequency spin qubit detuning noise in highly purified Si/SiGe
Tom Struck, Arne Hollmann, Floyd Schauer +8
The manipulation fidelity of a single electron qubit gate-confined in a Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we…
Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SiGe quantum dot
Arne Hollmann, Tom Struck, Veit Langrock +8
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the opera…
Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Y. Fujita, M. Yamada, M. Tsukahara +5
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias volta…
Pure spin current transport in a SiGe alloy
T. Naito, M. Yamada, M. Tsukahara +3
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with SiGe, we study pure spin current transport in a degenerate Si…
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita +4
We demonsrtate electrical spin injection and detection in -type Ge (-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral…
Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Rai Moriya, Kentarou Sawano, Yusuke Hoshi +8
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed we…