140 citations · 885 across the 23 of their papers we have counts for
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Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/SiGe quantum dot
Arne Hollmann, Tom Struck, Veit Langrock +8
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the opera…
Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Y. Fujita, M. Yamada, M. Tsukahara +5
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias volta…
Pure spin current transport in a SiGe alloy
T. Naito, M. Yamada, M. Tsukahara +3
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with SiGe, we study pure spin current transport in a degenerate Si…
Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Rai Moriya, Kentarou Sawano, Yusuke Hoshi +8
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed we…
Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
T. Obata, K. Takeda, J. Kamioka +6
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si chan…
In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano +2
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization.…
Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
K. Kasahara, S. Yamada, K. Sawano +2
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the FeSi/Ge(111) heterostructure developed originally, we ca…
Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Ryuichi Masutomi, Kohei Sasaki, Ippei Yasuda +4
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature depende…
Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots
Satoru Miyamoto, Oussama Moutanabbir, Toyofumi Ishikawa +5
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are si…
Well-width dependence of valley splitting in Si/SiGe quantum wells
Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama +3
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, ob…
Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Y. Ando, K. Hamaya, K. Kasahara +5
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of…
Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama +3
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudina…
Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
Kiyohiko Toyama, Takahisa Nishioka, Kentarou Sawano +2
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resi…
Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
K. Hamaya, S. Masubuchi, K. Hirakawa +5
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved…