140 citations · 885 across the 23 of their papers we have counts for
7 papers · 1 filter
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita +4
We demonsrtate electrical spin injection and detection in -type Ge (-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral…
Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Yuichiro Ando, Lan Qing, Yang Song +6
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the eff…
Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
K. Kasahara, Y. Fujita, S. Yamada +3
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect cur…
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Y. Ando, S. Yamada, K. Kasahara +3
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. C…
Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Y. Ando, S. Yamada, K. Kasahara +4
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoF…