Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure

Abstract

Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.

7 pages, 6 figures

References in corpus (6)

• Electronic measurement and control of spin transport in Silicon
• Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe_3-xMn_xSi Epilayers Grown on Ge(111)
• Epitaxial ferromagnetic Fe${}_3$Si/Si(111) structures with high-quality hetero-interfaces
• Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
• Non-ohmic spin transport in n-type doped silicon
• 35% magnetocurrent with spin transport through Si

Cited by in corpus (3)

• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions