72 citations · 231 across the 8 of their papers we have counts for
8 papers
Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface
Y. Fujita, Y. Miura, T. Sasaki +3
We study spin-scattering asymmetry at the interface of two ferromagnets (FMs) based on a half-metallic CoFeMnSi (CFMS)/CoFe interface. First-principles ballis…
Nonlinear Electrical Spin Conversion in a Biased Ferromagnetic Tunnel Contact
R. Jansen, A. Spiesser, H. Saito +4
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-describe…
Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Y. Fujita, M. Yamada, M. Tsukahara +5
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias volta…
Efficient spin transport along Si 100 at room temperature
M. Ishikawa, M. Tsukahara, Y. Fujita +4
We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $\langl…
Giant spin accumulation in silicon nonlocal spin-transport devices
A. Spiesser, H. Saito, Y. Fujita +4
Although the electrical injection, transport and detection of spins in silicon have been achieved, the induced spin accumulation was much smaller than expected and desired, limitin…
Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita +4
We demonsrtate electrical spin injection and detection in -type Ge (-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral…
Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
K. Kasahara, Y. Fujita, S. Yamada +3
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect cur…
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…