Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
arXiv:1311.6601 · doi:10.7567/APEX.7.033002
Abstract
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demonstrate the high spin generation efficiency and improve the quality of the transport channel for achieving Ge based spintronic devices.
5 pages, 3 figures
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Cited by in corpus (10)
- An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
- Experimental and Theoretical Investigation on the Possible Half-metallic Behaviour of Equiatomic Quaternary Heusler Alloys: CoRuMnGe and CoRuVZ (Z = Al, Ga)
- CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications
- Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
- Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
- Pure spin current transport in a SiGe alloy
- Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy
- The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
- Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves