Intrinsic Spin Lifetime of Conduction Electrons in Germanium

Abstract

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent $\mathbf{k}$$\cdot$$\mathbf{p}$ Hamiltonian in the vicinity of the $L$ point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.

13 pages, 2 figures

References in corpus (5)

• Electronic measurement and control of spin transport in Silicon
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Lateral Spin Injection in Germanium Nanowires
• Electrical injection and detection of spin accumulation in Ge at room temperature
• Spin-dependent scattering in a silicon transistor

Cited by in corpus (9)

• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
• Donor-driven spin relaxation in multi-valley semiconductors
• Spin-dependent optical properties in strained silicon and germanium
• Suppressing spin relaxation in silicon
• Optical orientation of electron spins and valence band spectroscopy in germanium
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Electric Field Modulation of Spin Transport
• Optical manipulation of the Rashba effect in germanium quantum wells
• Mid-Infrared Optical Spin Injection and Coherent Control