Intrinsic Spin Lifetime of Conduction Electrons in Germanium

Abstract

We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent $\mathbf{k}$$\cdot$$\mathbf{p}$ Hamiltonian in the vicinity of the $L$ point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix elements show excellent agreement with independent results from elaborate numerical methods.

arXiv comment13 pages, 2 figures

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Cited by in corpus (24)

• Optical spin injection and spin lifetime in Ge heterostructures
• An experimental demonstration of room-temperature spin transport in n-type Germanium epilayers
• Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
• Donor-driven spin relaxation in multi-valley semiconductors
• Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene
• Anisotropy-driven spin relaxation in germanium
• Dynamical Spin Injection into p-type Germanium at Room Temperature
• Giant g factor tuning of long-lived electron spins in Ge
• Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
• Carrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon
• Elliott-Yafet Spin-Phonon Relaxation Times from First Principles
• Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductors
• Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature
• Non-local opto-electrical spin injection and detection in germanium at room temperature
• Spin-dependent optical properties in strained silicon and germanium
• Suppressing spin relaxation in silicon
• Optical orientation of electron spins and valence band spectroscopy in germanium
• Optical spin orientation and depolarization in Ge
• Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Electric Field Modulation of Spin Transport
• Optical manipulation of the Rashba effect in germanium quantum wells
• Mid-Infrared Optical Spin Injection and Coherent Control
• Derivation of Electron Spin Relaxation Rate by Electron-Phonon Interaction Using a New Diagram Method