Analysis of phonon-induced spin relaxation processes in silicon

Abstract

We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an extensive set of matrix element expressions for all of the important spin-flip transitions in the multi-valley conduction band. The scattering angle has an explicit dependence on the electron wavevectors, phonon polarization, valley position and spin orientation of the electron. Comparison of the derived analytical expressions with results of empirical pseudopotential and adiabatic band charge models shows excellent agreement.

30 pages,10 figures

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• Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene
• Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions
• Anisotropy-driven spin relaxation in germanium
• Giant g factor tuning of long-lived electron spins in Ge
• Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence
• Elliott-Yafet Spin-Phonon Relaxation Times from First Principles
• Spin-dependent optical properties in strained silicon and germanium
• Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
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• Suppressing spin relaxation in silicon
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• Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films
• Spin-dependent inter- and intra-valley electron-phonon scattering in germanium
• Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si
• Study of the spin-pump-induced inverse spin-Hall effect in Bi doped n-type Si
• Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer
• Electric Field Modulation of Spin Transport
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon