Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
arXiv:0910.5012 · doi:10.1103/PhysRevB.81.045321
Abstract
We present a comprehensive theory of spin transport in a non-degenerate semiconductor that is in contact with multiple ferromagnetic terminals. The spin dynamics in the semiconductor is studied during a perturbation of a general, non-collinear magnetization configuration and a method is shown to identify the various configurations from current signals. The conventional Landauer-Büttiker description for spin transport across Schottky contacts is generalized by the use of a non-linearized I-V relation, and it is extended by taking into account non-coherent transport mechanisms. The theory is used to analyze a three terminal lateral structure where a significant difference in the spin accumulation profile is found when comparing the results of this model with the conventional model.
17 pages, 10 figures
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Cited by in corpus (13)
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- Analysis of phonon-induced spin relaxation processes in silicon
- Spin injection and detection up to room temperature in Heusler~alloy/-GaAs spin valves
- Injection and detection of spin in a semiconductor by tunneling via interface states
- Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
- Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier
- Spin Drift in Highly Doped n-type Si
- Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions
- Suppressing spin relaxation in silicon
- Non-linear spin transport in a rectifying ferromagnet/semiconductor Schottky contact
- Modulation of Spin Accumulation by Nanoscale Confinement using Electromigration in a Metallic Lateral Spin Valve
- Effects of interface electric field on the magnetoresistance in spin device
- Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves