Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions
arXiv:cond-mat/0203538 · doi:10.1103/PhysRevB.66.024416
Abstract
We present {\it ab initio} calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-Büttiker approach for the calculation of the spin-dependent dc conductance in the linear-responce regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarisation and a magnetoresistance ratio of almost the ideal 100%, if the transport is ballistic. In particular we study the significance of the transmission resonances caused by the presence of two interfaces.
13 pages, 9 figures
References in corpus (4)
- Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
- Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires
- Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor
- Ballistic Spin Injection from Fe(001) into ZnSe and GaAs
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