383 citations · 811 across the 6 of their papers we have counts for
6 papers
Single quantum dot nanowire LEDs
Ethan D. Minot, Freek Kelkensberg, Maarten van Kouwen +7
We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire…
Gate capacitance of back-gated nanowire field-effect transistors
Olaf Wunnicke
Gate capacitances of back-gated nanowire field-effect transistors (NW-FETs) are calculated by means of finite element methods and the results are compared with analytical results o…
Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation
O. Wunnicke, Ph. Mavropoulos, R. Zeller +1
We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch o…
Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles
Olaf Wunnicke, Phivos Mavropoulos, Peter H. Dederichs
We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility…
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions
Phivos Mavropoulos, Olaf Wunnicke, Peter H. Dederichs
We present {\it ab initio} calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experim…
Ballistic Spin Injection from Fe(001) into ZnSe and GaAs
O. Wunnicke, Ph. Mavropoulos, R. Zeller +2
We consider the spin injection from Fe into ZnSe and GaAs in the ballistic limit. By means of the ab initio SKKR method we calculate the ground state properties of epitaxial Fe|ZnS…