Effect of bulk inversion asymmetry on the Datta-Das transistor

Abstract

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.

4 pages, Revtex4, 4 EPS figures

References in corpus (10)

• Non-ballistic spin field-effect transistor
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• Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires
• Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures
• The Rashba Hamiltonian and electron transport
• Spin-orbit coupling in interacting quasi-one-dimensional electron systems
• Rashba precession in quantum wires with interaction
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• Conductance of Rashba spin-split systems with ferromagnetic contacts
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