Can spintronic field effect transistors compete with their electronic counterparts?

Abstract

Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We also show that some recently proposed modifications of the original spin field effect transistor concept of Datta and Das [Appl. Phys. Lett., Vol. 56, 665 (1990)] actually lead to worse performance than the original construct.

References in corpus (1)

• Non-magnetic semiconductor spin transistor

Cited by in corpus (22)

• Semiconductor Spintronics
• Performance of a spin-based insulated gate field effect transistor
• Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
• An alternate spintronic analog of the electro-optic modulator
• Datta-Das type spin-field effect transistor in non-ballistic regime
• Zero-field spin-splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures
• Multiferroic oxides-based flash-memory and spin-field-effect transistor
• Modulation of spin dynamics in a channel of a non-ballistic spin field effect transistor
• Computing with spins: From classical to quantum computing
• Modeling for Semiconductor Spintronics
• Superconducting monolayer deposited on substrate: effects of the spin-orbit coupling induced by proximity effects
• Ballistic spin field-effect transistors: Multichannel effects
• Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells
• A spin field effect transistor for low leakage current
• Strained topological insulator spin field effect transistor
• Are spin junction transistors suitable for signal processing?
• A Spin Field Effect Transistor Based on a Strained Two Dimensional Layer of a Weyl Semimetal
• Weyl semimetallic state with antiferromagnetic order in Rashba-Hubbard model
• New perspective on symmetry breaking in a clean antiferromagnetic chain: Spin-selective transport and NDR phenomenon
• Time reversal reserved spin valve and spin transistor based on unconventional $p$-wave magnets
• Suppression of Spin Dephasing in a Two-Dimensional Electron Gas with a Quantum Point Contact
• Monte Carlo simulations of spin transport in nanoscale In${}_{0.7}$Ga${}_{0.3}$As transistors: Temperature and size effects