Datta-Das type spin-field effect transistor in non-ballistic regime
arXiv:0706.3557 · doi:10.1103/PhysRevB.77.045323
Abstract
It is revealed that in spin helix state of (001) quantum well system, strong suppression of D'yakonov-Perel' spin relaxation process occurs by an interplay between Rashba and Dresselhaus couplings over a wide range of Rashba coupling strength. Contrary to common belief in early works, this leads to the finding that Datta-Das type spin-field effect transistor is actually applicable to more realistic non-ballistic transport regime in two dimensional electron gas system.
8 pages, 3 figures
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Cited by in corpus (14)
- Emergence of the persistent spin helix in semiconductor quantum wells
- Persistent Spin Textures in Semiconductor Nanostructures
- Spin drift and diffusion in one- and two-subband helical systems
- Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire
- Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer
- Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems
- Spin control in semiconductor quantum wires
- Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
- Modeling of diffusion of injected electron spins in spin-orbit coupled microchannels
- Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells
- (110) Facet of MgTe Zinc Blende Semiconductor: A Holy Grail for Modern Spintronics
- Investigating Quantum Spin-Textures Using Universal MJ Hamiltonians
- Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet
- Random walk approach to spin dynamics in a two-dimensional electron gas with spin-orbit coupling