Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

Abstract

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The density matrix description of the spin is incorporated in the Monte Carlo method to account for the spin polarization dynamics. The spin-orbit interaction in the spin FET leads to both coherent evolution and dephasing of the electron spin polarization. Spin-independent scattering mechanisms, including optical phonons, acoustic phonons and ionized impurities, are implemented in the simulation. The electric field is determined self-consistently from the charge distribution resulting from the electron motion. Description of the Monte Carlo scheme is given and simulation results are reported for temperatures in the range 77-300 K.

18 pages, 7 figures

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Cited by in corpus (12)

• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Datta-Das type spin-field effect transistor in non-ballistic regime
• Modeling for Semiconductor Spintronics
• Spin-orbit coupling in bulk GaAs
• Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well
• Schottky-barrier induced spin dephasing in spin injection
• Monte Carlo Modeling of Spin-polarized Photoemission from p-doped GaAs Activated to Negative Electron Affinity
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor
• Spin dephasing in Silicon Germanium nanowires
• Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium
• Monte Carlo simulations of spin transport in nanoscale In${}_{0.7}$Ga${}_{0.3}$As transistors: Temperature and size effects