Schottky-barrier induced spin dephasing in spin injection
arXiv:cond-mat/0506251 · doi:10.1103/PhysRevB.72.153301
Abstract
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the depletion region and parallel to the injection direction, is very large. This electric field can induce an effective magnetic field due to the Rashba effect and cause strong spin dephasing.
5 pages, 5 figures. Phys. Rev B 72, 2005 (in press)
References in corpus (16)
- Spintronics: Fundamentals and applications
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
- Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
- High temperature spin dephasing in n-typed GaAs quantum wells
- Electron Spin Injection at a Schottky Contact
- Spin-polarized light emitting diode using metal/insulator/semiconductor structures
- Hot-electron effect in spin dephasing in -type GaAs quantum wells
- Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures
- Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts
- Kinetic theory of spin transport in n-typed semiconductor quantum wells
- Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
- Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction
- Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well
Cited by in corpus (6)
- Spin dynamics in semiconductors
- Spin memristive systems
- Spin dynamics in a compound semiconductor spintronic structure with a Schottky barrier
- Spin diffusion/transport in -type GaAs quantum wells
- Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime
- Spin polarization control by electric field gradients