Hot-electron effect in spin dephasing in -type GaAs quantum wells
arXiv:cond-mat/0401113 · doi:10.1103/PhysRevB.69.245320
Abstract
We perform a study of the effect of the high in-plane electric field on the spin precession and spin dephasing due to the D'yakonov-Perel' mechanism in -type GaAs (100) quantum wells by constructing and numerically solving the kinetic Bloch equations. We self-consistently include all of the scattering such as electron-phonon, electron-non-magnetic impurity as well as the electron-electron Coulomb scattering in our theory and systematically investigate how the spin precession and spin dephasing are affected by the high electric field under various conditions. The hot-electron distribution functions and the spin correlations are calculated rigorously in our theory. It is found that the D'yakonov-Perel' term in the electric field provides a non-vanishing effective magnetic field that alters the spin precession period. Moreover, spin dephasing is markedly affected by the electric field. The important contribution of the electron-electron scattering to the spin dephasing is also discussed.
11 pages, 11 figures, accepted for publication in Phys. Rev. B
References in corpus (15)
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Low-temperature spin relaxation in n-type GaAs
- High temperature spin dephasing in n-typed GaAs quantum wells
- Efficient electron spin manipulation in a quantum well by an in-plane electric field
- Kinetics of spin coherence of electrons in an undoped semiconductor quantum well
- Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures
- Spin diffusion at finite electric and magnetic fields
- Kinetic theory of spin transport in n-typed semiconductor quantum wells
- Longitudinal spin decoherence in spin diffusion in semiconductors
- Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction
- Spin oscillations in transient diffusion of a spin pulse in n-type semiconductor quantum wells
- Decay of spin polarized hot carrier current in a quasi one-dimensional spin valve structure
- Manipulation of spin dephasing in InAs quantum wires
- Rashba-effect-induced spin dephasing in n-typed InAs quantum wells
- Spin dephasing in n-typed GaAs quantum wells in the presence of high magnetic fields in Voigt configuration
Cited by in corpus (59)
- Semiconductor Spintronics
- Spin dynamics in semiconductors
- Coherent wave-packet evolution in coupled bands
- Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
- Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
- Enhanced spin relaxation time due to electron-electron scattering in semiconductors
- Spin relaxation in -type GaAs quantum wells from a full microscopic approach
- Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas
- Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a GaAs/AlGaAs quantum well
- Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
- Dynamics of photoexcited carriers in graphene
- Dependence of spin dephasing on initial spin polarization in a high-mobility two-dimensional electron system
- Hole spin dephasing in -type semiconductor quantum wells
- Multi-subband effect in spin dephasing in semiconductor quantum wells
- Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
- Spin relaxation due to the Bir-Aronov-Pikus mechanism in intrinsic and -type GaAs quantum wells from a fully microscopic approach
- Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
- Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
- Control of spin coherence in -type GaAs quantum wells using strain
- Spin transport theory in ferromagnet/semiconductor systems with non-collinear magnetization configurations
- Modeling for Semiconductor Spintronics
- Electron spin relaxation in intrinsic bulk InP semiconductor
- Spin diffusion/transport in -type GaAs quantum wells
- Hot-carrier transport and spin relaxation on the surface of topological insulator
- Spin relaxation in -type GaAs quantum wells with transient spin grating
- Spin relaxation in -type (111) GaAs quantum wells
- Current-induced Spin Polarization in Two-Dimensional Hole Gas
- Electric generation of spin in crystals with reduced symmetry
- Microscopic theory of ultrafast dynamics of carriers photoexcited by THz and near-infrared linearly-polarized laser pulses in graphene
- Schottky-barrier induced spin dephasing in spin injection
- Multi-valley spin relaxation in the presence of high in-plane electric fields in -type GaAs quantum wells
- Diffusion and transport of spin pulses in an -type semiconductor quantum well
- Kinetics of spin coherence of electrons in -type InAs quantum wells under intense terahertz laser fields
- Hole spin relaxation in -type (111) GaAs quantum wells
- Spin relaxation in an InAs quantum dot in the presence of terahertz driving fields
- Kinetic investigation on extrinsic spin Hall effect induced by skew scattering
- Spin relaxation time, spin dephasing time and ensemble spin dephasing time in -type GaAs quantum wells
- Multivalley spin relaxation in -type bulk GaAs in the presence of high electric fields
- Hole spin relaxation in -type GaAs quantum wires
- Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
- Spin dynamics in high-mobility two-dimensional electron systems
- Non-Markovian hole spin kinetics in -type GaAs quantum wells
- Optically-Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction
- Hydrodynamic model for relaxation of optically injected currents in quantum wells
- Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
- Ambipolar spin transport in (111) GaAs quantum wells
- Spin relaxation and transport behaviors in altermagnetic systems
- Electron spin relaxation in -type GaAs quantum wells
- Electron spin relaxation in n-type InAs quantum wires
- Voltage controlled spin precession in InAs quantum wells
- Electron spin diffusion at the interface of multiferroic oxides
- Spin relaxation in -type ZnO quantum wells
- Spin dynamics of two-dimensional electrons with Rashba spin-orbit coupling and electron-electron interactions
- Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells
- Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"
- Spin diffusion in -type (111) GaAs quantum wells
- Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells
- High-field charge transport on the surface of BiSe
- Effect of Singwi-Tosi-Land-Sjölander local field correction on spin relaxation in -type GaAs quantum wells at low temperature