Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach

Abstract

Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon, electron-electron, electron-hole, and electron-hole exchange (the Bir-Aronov-Pikus mechanism) scatterings are explicitly included. The Elliot-Yafet mechanism is also fully incorporated. This approach offers a way toward thorough understanding of electron spin relaxation both near and far away from the equilibrium in the metallic regime. The dependence of the spin relaxation time on electron density, temperature, initial spin polarization, photo-excitation density, and hole density are studied thoroughly with the underlying physics analyzed. In contrast to the previous investigations in the literature, we find that: (i) In $n$-type materials, the Elliot-Yafet mechanism is {\em less} important than the D'yakonov-Perel' mechanism, even for the narrow band-gap semiconductors such as InSb and InAs. (ii) The density dependence of the spin relaxation time is nonmonotonic and we predict a {\em peak} in the metallic regime in both $n$-type and intrinsic materials. (iii) In intrinsic materials, the Bir-Aronov-Pikus mechanism is found to be negligible compared with the D'yakonov-Perel' mechanism. We also predict a peak in the temperature dependence of spin relaxation time which is due to the nonmonotonic temperature dependence of the electron-electron Coulomb scattering in intrinsic materials with small initial spin polarization. (iv) In $p$-type III-V semiconductors, ...... (the remaining is omitted here due to the limit of space)

25 pages, 17 figures

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• Spin dynamics in semiconductors
• Theory of the spin relaxation of conduction electrons in silicon
• Semiconductor Spin Noise Spectroscopy: Fundamentals, Accomplishments, and Challenges
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS${}_2$: Role of intravalley and intervalley processes
• Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
• Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation
• Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
• Electron spin relaxation in paramagnetic Ga(Mn)As quantum wells
• Spin relaxation near the metal-insulator transition: dominance of the Dresselhaus spin-orbit coupling
• Ab initio Ultrafast Spin Dynamics in Solids
• The Larmor clock and anomalous spin dephasing in silicon
• D'yakonov-Perel' spin relaxation for degenerate electrons in the electron-hole liquid
• Electron spin relaxation in GaAs${}_{1-x}$Bi${}_x$: Effects of spin-orbit tuning by Bi incorporation
• Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures
• Electron spin relaxation in intrinsic bulk InP semiconductor
• Spin dynamics in the strong spin-orbit coupling regime
• Hole spin relaxation in intrinsic and $p$-type bulk GaAs
• Spin relaxation in $n$-type (111) GaAs quantum wells
• Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
• Monte Carlo Modeling of Spin-polarized Photoemission from p-doped GaAs Activated to Negative Electron Affinity
• Hole spin relaxation in $p$-type (111) GaAs quantum wells
• Electron spin relaxation in bilayer graphene
• Hole spin relaxation in bilayer WSe${}_2$
• Multivalley spin relaxation in $n$-type bulk GaAs in the presence of high electric fields
• Spin Relaxation in GaAs: Importance of Electron-Electron Interactions
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• The role of electron-electron scattering in spin transport
• Spin relaxation in ultracold spin-orbit coupled ${}^{40}$K gas
• Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system
• Hole spin relaxation and coefficients in Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs
• Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
• Efficient spin accumulation carried by slow relaxons in chiral tellurium
• Hole spin relaxation in [001] strained asymmetric Si/SiGe and Ge/SiGe quantum wells
• Comment on "Photon energy and carrier density dependence of spin dynamics in bulk CdTe crystal at room temperature"
• Spin diffusion in p-type bilayer WSe${}_2$
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Electron spin relaxation in $p$-type GaAs quantum wells
• Nonexponential spin decay in a quantum kinetic description of the D'yakonov-Perel' mechanism mediated by impurity scattering
• Anomalous D'yakonov-Perel' spin relaxation in InAs (110) quantum wells under strong magnetic field: role of Hartree-Fock self-energy
• Spin diffusion in ultracold spin-orbit coupled ${}^{40}$K gas
• Spin relaxation in $n$-type ZnO quantum wells
• Voltage controlled spin precession in InAs quantum wells
• Charge and spin diffusion on the metallic side of the metal-insulator transition: a self-consistent approach
• Comment on "Density dependence of electron-spin polarization and relaxation in intrinsic GaAs at room temperature"
• Derivation of Electron Spin Relaxation Rate by Electron-Phonon Interaction Using a New Diagram Method
• Spin diffusion in $n$-type (111) GaAs quantum wells
• Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells
• Calculation of the Electron Spin Relaxation Times in InSb and InAs by the Projection-Reduction Method
• Spin decoherence in n-type GaAs: the effectiveness of the third-body rejection method for electron-electron scattering
• Effect of Ionized Impurity Screening on Spin Decoherence at Low and Intermediate Temperatures in GaAs
• Electron spin rephasing in $n$-type (001) GaAs quantum wells