Spin-orbit coupling in bulk GaAs

Abstract

We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the $s{p}^3{s}^{\ast }{d}^5$ and $s{p}^3{s}^{\ast }$ nearest-neighbor tight-binding models. In the $\Gamma$-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs $L$ and $X$ valleys. These results are important to the realization of spintronic device and the investigation of spin dynamics far away from equilibrium.

8 pages, 3 figures, Physica E, in press

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• Spintronics: Fundamentals and applications
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• Ab-initio Prediction of Conduction Band Spin Splitting in Zincblende Semiconductors
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• $L$-valley electron $g$ factor in bulk GaAs and AlAs
• Enhancement of electron spin lifetime in GaAs crystals: the benefits of dichotomous noise
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• Spin-orbit coupling and $g$-factor of $X$-valley in cubic GaN
• Spin decoherence in n-type GaAs: the effectiveness of the third-body rejection method for electron-electron scattering
• Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices
• Effect of Ionized Impurity Screening on Spin Decoherence at Low and Intermediate Temperatures in GaAs