Spin orbit coupling in bulk ZnO and GaN
arXiv:0805.1577 · doi:10.1063/1.3018600
Abstract
Using group theory and Kane-like model together with the Löwdining partition method, we derive the expressions of spin-orbit coupling of electrons and holes, including the linear- Rashba term due to the intrinsic structure inversion asymmetry and the cubic- Dresselhaus term due to the bulk inversion asymmetry in wurtzite semiconductors. The coefficients of the electron and hole Dresselhaus terms of ZnO and GaN in wurtzite structure and GaN in zinc-blende structure are calculated using the nearest-neighbor and tight-binding models separately.
9 pages, 6 figures, to be published in J. Appl. Phys
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- Prediction of extremely long electron spin lifetimes at room temperature in wurtzite semiconductor quantum wells
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