Spin transport and spin dephasing in zinc oxide
arXiv:1205.3666 · doi:10.1063/1.4747321
Abstract
The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns (2K), 2.0ns (10K), and 31ps (200K).
7 pages, 5 figures; supplemental material added
References in corpus (6)
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Cited by in corpus (9)
- 5d transition metal oxide IrO2 as a material for spin current detection
- Laser molecular beam epitaxy of ZnO thin films and heterostructures
- All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration
- Laser induced THz emission from femtosecond photocurrents in Co/ZnO/Pt and Co/Cu/Pt multilayers
- Zinc Oxide - From Dilute Magnetic Doping to Spin Transport
- Unambiguous determination of spin dephasing times in ZnO
- Temperature dependence of the spin relaxation in highly degenerate ZnO thin films
- Photo-enhanced magnetization in Fe-doped ZnO nanowires
- Pure spin current transport in gallium doped zinc oxide