activity
20042008
most citedPiezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

80 citations · 112 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci200880 cited

Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

C. Bihler, M. Althammer, A. Brandlmaier +8

We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor an…

cond-mat.mtrl-sci20079 cited

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

C. Bihler, M. Kraus, M. S. Brandt +5

We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie t…

cond-mat.mtrl-sci200722 cited

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

C. Bihler, M. Kraus, H. Huebl +7

We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMn…

cond-mat.mtrl-sci20041 cited

Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier

D. Reisinger, P. Majewski, M. Opel +2

Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions wit…

cond-mat.mtrl-sci2004

Hall effect in FeO epitaxial thin films

D. Reisinger, P. Majewski, M. Opel +2

Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical…