Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments

Abstract

The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the complex spin mixing interface conductance. We find that the imaginary part is by one order of magnitude larger than the real part. Both decrease with increasing temperature. This reduction is in agreement with thermal fluctuations in the ferromagnet.

5 pages, 4 figures

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• Theory of spin Hall magnetoresistance
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• Magnetoresistance due to edge spin accumulation
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• Two-dimensional electron system at the magnetically tunable EuO/SrTiO${}_3$ interface
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Cited by in corpus (6)

• Paramagnetic spin Hall magnetoresistance
• Theory of spin-Hall magnetoresistance in the AC (terahertz) regime
• Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films
• Spin mixing conductance and spin magnetoresistance of iridate/manganite interface
• Realisation of de Gennes${}^{\prime }$ Absolute Superconducting Switch with a Heavy Metal Interface
• Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides