Paramagnetic spin Hall magnetoresistance

Abstract

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd${}_3$Ga${}_5$O${}_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems.

arXiv comment40 pages, 15 figures

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Cited by in corpus (6)

• Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance
• Mechanism of paramagnetic spin Seebeck effect
• Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance
• Spin Hall magnetoresistance in paramagnetic NdGaO3
• Observation of quantum interference conductance fluctuations in metal rings with strong spin-orbit coupling
• The spin Hall effect