Control of spin injection by direct current in lateral spin valves

Abstract

The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of the injected current. We find that the spin accumulation is reversed by changing the direction of the injected current, whereas its magnitude does not change. The injection mechanism for both current directions is thus perfectly symmetric, leading to the same spin injection efficiency for both spin types. This result is accounted for by a spin-dependent diffusion model. Joule heating increases considerably the local temperature in the spin valves when high current densities are injected ($\sim$80--105 K for 1--2$\times 10^7$A cm${}^{-2}$), strongly affecting the spin accumulation.

6 pages, 5 figures

References in corpus (9)

• Spintronics: Fundamentals and applications
• Direct electronic measurement of the spin Hall effect
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review
• Spin Injection and Detection in Magnetic Nanostructures
• Evidence for crossed Andreev reflection in superconductor-ferromagnet hybrid structures
• Spin injection and spin accumulation in all-metal mesoscopic spin valves
• Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering
• Spin injection and relaxation in a mesoscopic superconductor

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