Contribution of defects to the spin relaxation in copper nanowires

Abstract

The contributions to the spin relaxation in copper (Cu) nanowires are quantified by carefully analyzing measurements of both charge and spin transport in lateral spin valves as a function of temperature and thickness. The temperature dependence of the spin-flip scattering solely arises from the scattering with phonons, as in bulk Cu, whereas we identify grain boundaries as the main temperature-independent contribution of the defects in the nanowires. A puzzling maximum in the spin diffusion length of Cu at low temperatures is found, which can be explained by the presence of magnetic impurities. The results presented here suggest routes for improving spin transport in metallic nanostructures, otherwise limited by confinement effects.

arXiv comment10 pages, 4 figures, 1 table

References in corpus (11)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Temperature dependence of the resistance of metallic nanowires (diameter $\ge$ 15 nm): Applicability of Bloch-Grüneisen theorem
• Spin injection and spin accumulation in all-metal mesoscopic spin valves
• Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
• Spin transport in high quality suspended graphene devices
• Spin Transport and Relaxation in Graphene
• Temperature dependent asymmetry of the nonlocal spin-injection resistance: evidence for spin non-conserving interface scattering
• Control of spin injection by direct current in lateral spin valves
• Surface spin flip probability of mesoscopic Ag wires
• Enhanced spin-flip scattering at the surface of copper in lateral spin valves
• Spin relaxation mechanism in Silver nanowires covered with MgO protection layer

Cited by in corpus (31)

• Tuning the spin Hall effect of Pt from the moderately dirty to the superclean regime
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• Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects
• Origin of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves
• Unveiling the mechanisms of the spin Hall effect in Ta
• Direct detection of pure spin-current by x-ray pump-probe measurements
• Temperature dependence of spin polarization in ferromagnetic metals using lateral spin valves
• Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
• Spin diffusion length of Permalloy using spin absorption in lateral spin valves
• Modulation of pure spin currents with a ferromagnetic insulator
• Large spin-to-charge conversion at the two-dimensional interface of transition metal dichalcogenides and permalloy
• Spin relaxation through Kondo scattering in Cu/Py lateral spin valves
• Spin Currents injected electrically and thermally from highly spin polarized Co${}_2$MnSi
• Theory of Kondo suppression of spin polarization in nonlocal spin valves
• Accessing ultrafast spin-transport dynamics in copper using broadband terahertz spectroscopy
• Experimental evidence of spin-orbit torque from metallic interfaces
• Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials
• Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
• Phase-Controllable Nonlocal Spin Polarization in Proximitized Nanowires
• Detection of the interfacial exchange field at a ferromagnetic insulator-nonmagnetic metal interface with pure spin currents
• Spin dependent transport characterization in metallic lateral spin valves using 1D and 3D modeling
• Anisotropic Spin Relaxation Induced by Surface Spin-Orbit Effects
• Spin transport enhancement by controlling the Ag growth in lateral spin valves
• Effect of the interface resistance in non-local Hanle measurements
• Revealing the importance of interfaces for pure spin current transport
• Spin diffusion length associated to out-of-plane resistivity of Pt thin films in spin pumping experiments
• Unusual Scaling of Kondo Spin Relaxation
• Quantification of spin-charge interconversion in highly resistive sputtered Bi${}_x$Se${}_{1-x}$ with non-local spin valves
• Accumulation of spin-polarized states of charge carriers and a spintronic battery
• Modulation of Spin Accumulation by Nanoscale Confinement using Electromigration in a Metallic Lateral Spin Valve
• Large Spin-to-Charge Conversion in Ultrathin Gold-Silicon Multilayers