457 citations · 1.8k across the 24 of their papers we have counts for
24 papers
Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects
Junhyeon Jo, Francesco Calavalle, Beatriz Martín-García +4
The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via…
Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Diogo C. Vaz, Chia-Ching Lin, John J. Plombon +20
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potenti…
Spin-to-charge conversion by spin pumping in sputtered polycrystalline BiSe
Isabel C Arango, Alberto Anadón, Silvestre Novoa +9
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic stat…
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Inge Groen, Van Tuong Pham, Stefan Ilić +10
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…
All-electrical spin-to-charge conversion in sputtered BiSe
Won Young Choi, Isabel C. Arango, Van Tuong Pham +14
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…
Spin Hall magnetoresistance effect from a disordered interface
Sara Catalano, Juan M. Gomez-Perez, M. Xochitl Aguilar-Pujol +4
The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetiz…