457 citations · 1.8k across the 24 of their papers we have counts for
5 papers · 1 filter
Spin-to-charge conversion by spin pumping in sputtered polycrystalline BiSe
Isabel C Arango, Alberto Anadón, Silvestre Novoa +9
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic stat…
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Inge Groen, Van Tuong Pham, Stefan Ilić +10
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…
All-electrical spin-to-charge conversion in sputtered BiSe
Won Young Choi, Isabel C. Arango, Van Tuong Pham +14
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find mate…
Spin Hall magnetoresistance effect from a disordered interface
Sara Catalano, Juan M. Gomez-Perez, M. Xochitl Aguilar-Pujol +4
The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetiz…
Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires
Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García +10
Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have b…