All-electrical spin-to-charge conversion in sputtered Bi${}_x$Se${}_{1-x}$

Abstract

One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi${}_x$Se${}_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.

arXiv commentMain text (18 pages, 3 figures, 2 tables) and supporting information (18 pages)

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Cited by in corpus (5)

• Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
• Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
• Heisenberg machines with programmable spin-circuits
• Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi${}_x$Se${}_{1-x}$
• Quantification of spin-charge interconversion in highly resistive sputtered Bi${}_x$Se${}_{1-x}$ with non-local spin valves